| PART |
Description |
Maker |
| CGY96 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
INFINEON TECHNOLOGIES AG
|
| SKY77542 |
Tx - Rx iPAC- FEM for Dual-Band GSM/GPRS (880 - 915 MHz), (1710 - 1785 MHz)
|
Skyworks Solutions Inc.
|
| SKY77195 |
Dual-Band PA Module for WCDMA / HSDPA Band I (1920-1980 MHz) and Band VIII (880-915 MHz)
|
Skyworks Solutions Inc.
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| SKY77189 |
Power Amplifier Module for WCDMA / HSDPA Band VIII (880-915 MHz)
|
Skyworks Solutions Inc.
|
| S3P72K8 |
singl-chip CMOS microcontroller
|
http://
|
| S3P72K8 S3C72K8 |
singl-chip CMOS microcontroller
|
SAMSUNG[Samsung semiconductor]
|
| SKY77705 |
Power Amplifier Module for WCDMA / HSDPA / HSUPA / HSPA / LTE - Band VIII (880-915 MHz)
|
Skyworks Solutions Inc.
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
